Special issue on semiconductors - Materials and processing technologies. High rate reactive ion etching.

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Deep Reactive Ion Etching (DRIE)

High-rate reactive ion etching of barium hexaferrite films using optimal CHF3/SF6 gas mixtures

CHF3/SF6 gas mixtures Zhaohui Chen, Aria Yang, Changqing Xie, Qinghua Yang, C. Vittoria, and V. G. Harris Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 USA Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese ...

Special Issue on Next Generation Wireless Technologies

The next generation wireless networks are expected to converge into a ubiquitous architecture, which includes high-speed cellular networks, wireless local area networks (WLANs), mobile ad hoc networks, peer-to-peer networks, wireless metropolitan area networks (WMANs), etc. The increasing demand of wireless multimedia services has motivated the development of broad wireless access in the hetero...

Special Issue on Image Processing and Analysis

Conceptualizing away the sketch processing details in a user interface will enable general users and domain experts to create more complex sketches. There are many domains for which sketch recognition systems are being developed. But, they entail image-processing skill if they are to handle the details of each domain, and also they are lengthy to build. The implemented system’s goal is to enabl...